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Ru and RuO2 gate electrodes for advanced CMOS technology

✍ Scribed by K. Fröhlich; K. Husekova; D. Machajdik; J.C. Hooker; N. Perez; M. Fanciulli; S. Ferrari; C. Wiemer; A. Dimoulas; G. Vellianitis; F. Roozeboom

Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
304 KB
Volume
109
Category
Article
ISSN
0921-5107

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