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Room-temperature Al single-electron transistor made by electron-beam lithography

✍ Scribed by Y. A. Pashkin; Y. Nakamura; J. S. Tsai

Book ID
121851014
Publisher
American Institute of Physics
Year
2000
Tongue
English
Weight
318 KB
Volume
76
Category
Article
ISSN
0003-6951

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We have fabricated a Si-based single electron transistor (SET) with precisely controlled structure using a newly developed electron beam nanolithography system and a Si nanofabrication process. A Si island and tunnel barriers are fabricated by trench etching with reactive ion etching on a superficia