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Room temperature operated single electron transistor made by STM/AFM nano-oxidation process

โœ Scribed by Kazuhiko Matsumoto


Book ID
108023949
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
180 KB
Volume
227
Category
Article
ISSN
0921-4526

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Room temperature operated single electro
โœ K. Kurihara; H. Namatsu; M. Nagase; T. Makino ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 305 KB

We have fabricated a Si-based single electron transistor (SET) with precisely controlled structure using a newly developed electron beam nanolithography system and a Si nanofabrication process. A Si island and tunnel barriers are fabricated by trench etching with reactive ion etching on a superficia