Single-electron transistors operating at room temperature, fabricated utilizing nanocrystals created by focused-ion beam

Room temperature operated single electro

Room temperature operated single electron transistor fabricated by electron beam nanolithography

✍ K. Kurihara; H. Namatsu; M. Nagase; T. Makino 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 305 KB

We have fabricated a Si-based single electron transistor (SET) with precisely controlled structure using a newly developed electron beam nanolithography system and a Si nanofabrication process. A Si island and tunnel barriers are fabricated by trench etching with reactive ion etching on a superficia