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Room temperature operated single electron transistor fabricated by electron beam nanolithography

✍ Scribed by K. Kurihara; H. Namatsu; M. Nagase; T. Makino

Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
305 KB
Volume
35
Category
Article
ISSN
0167-9317

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✦ Synopsis

We have fabricated a Si-based single electron transistor (SET) with precisely controlled structure using a newly developed electron beam nanolithography system and a Si nanofabrication process. A Si island and tunnel barriers are fabricated by trench etching with reactive ion etching on a superficial Si layer of SIMOX substrate, combined with an image reversal technique using ECR plasma oxidation. The SET fabricated with this method accommodates a 10-nm Si island and achieved room temperature operation.

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✍ G. Pennelli; M. Piotto; G. Barillaro πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 285 KB

In this work, we propose a fabrication process for a single-electron transistor on silicon. The process is developed on silicon on insulator wafer and it is based on electron beam lithography and KOH anisotropic etching. A structure composed by a small silicon isle connected to the leads by channels