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Silicon single-electron transistor fabricated by anisotropic etch and oxidation

✍ Scribed by G. Pennelli; M. Piotto; G. Barillaro

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
285 KB
Volume
83
Category
Article
ISSN
0167-9317

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✦ Synopsis

In this work, we propose a fabrication process for a single-electron transistor on silicon. The process is developed on silicon on insulator wafer and it is based on electron beam lithography and KOH anisotropic etching. A structure composed by a small silicon isle connected to the leads by channels with triangular cross-section is obtained. Channel dimensions have been reduced by oxidation and the substrate has been used as backgate. Preliminary I-V characteristics show phenomena of charge/discharge at room temperature.

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