High aspect ratio silicon pillars fabricated by electrochemical etching and oxidation of macroporous silicon
✍ Scribed by H.W Lau; G.J Parker; R Greef
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 661 KB
- Volume
- 276
- Category
- Article
- ISSN
- 0040-6090
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## Abstract Metal‐assisted etching is used in conjunction with block‐copolymer lithography to create ordered and densely‐packed arrays of high‐aspect‐ratio single‐crystal silicon nanowires with uniform crystallographic orientations. Nanowires with diameters and spacings down to 19 nm and 10 nm, res
Different processes involving an inductively coupled plasma reactor are presented either for deep reactive ion etching or for isotropic etching of silicon. On one hand, high aspect ratio microstructures with aspect ratio up to 107 were obtained on sub-micron trenches. Application to photonic MEMS is