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Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures

✍ Scribed by F. Marty; L. Rousseau; B. Saadany; B. Mercier; O. Français; Y. Mita; T. Bourouina


Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
483 KB
Volume
36
Category
Article
ISSN
0026-2692

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✦ Synopsis


Different processes involving an inductively coupled plasma reactor are presented either for deep reactive ion etching or for isotropic etching of silicon. On one hand, high aspect ratio microstructures with aspect ratio up to 107 were obtained on sub-micron trenches. Application to photonic MEMS is presented. Isotropic etching is also used either alone or in combination with anisotropic etching to realize various 3D shapes.