We have fabricated a Si-based single electron transistor (SET) with precisely controlled structure using a newly developed electron beam nanolithography system and a Si nanofabrication process. A Si island and tunnel barriers are fabricated by trench etching with reactive ion etching on a superficia
β¦ LIBER β¦
Electron diffraction from gratings fabricated by electron beam nanolithography
β Scribed by Y. Ito; A.L. Bleloch; J.H. Paterson; L.M. Brown
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 540 KB
- Volume
- 52
- Category
- Article
- ISSN
- 0304-3991
No coin nor oath required. For personal study only.
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In the field of optical telecommunication, polymers are an interesting class of materials for the fabrication of passive optical devices. Electron beam (EB) irradiation appears as a promising method to achieve structures presenting a layer with a modified index of refraction, and therefore to genera