We have fabricated a Si-based single electron transistor (SET) with precisely controlled structure using a newly developed electron beam nanolithography system and a Si nanofabrication process. A Si island and tunnel barriers are fabricated by trench etching with reactive ion etching on a superficia
✦ LIBER ✦
Titanium single-electron transistor fabricated by electron-beam lithography
✍ Scribed by Mika A. Sillanpää; Pertti J. Hakonen
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 162 KB
- Volume
- 15
- Category
- Article
- ISSN
- 1386-9477
No coin nor oath required. For personal study only.
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