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Room-Temperature Operation of Silicon Single-Electron Transistor Fabricated Using Optical Lithography

โœ Scribed by Sun, Yongshun; Rusli, ; Singh, Navab


Book ID
121851196
Publisher
IEEE
Year
2011
Tongue
English
Weight
183 KB
Volume
10
Category
Article
ISSN
1536-125X

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๐Ÿ“œ SIMILAR VOLUMES


Room temperature operated single electro
โœ K. Kurihara; H. Namatsu; M. Nagase; T. Makino ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 305 KB

We have fabricated a Si-based single electron transistor (SET) with precisely controlled structure using a newly developed electron beam nanolithography system and a Si nanofabrication process. A Si island and tunnel barriers are fabricated by trench etching with reactive ion etching on a superficia