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Role of radiation defects in photoconductivity transients and photoluminescence spectra of epitaxial GaN layers

✍ Scribed by E. Gaubas; K. Kazlauskas; J. Vaitkus; A. Žukauskas


Book ID
104557408
Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
228 KB
Volume
2
Category
Article
ISSN
1862-6351

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The radiative recombination process of In x Ga 1±x N epitaxial layers was investigated by means of the temperature dependence of time-resolved photoluminescence spectra. Two emission components separated by about 40 meV were clearly observed. At 6 K, the higher-and lower-energy components had decay-