𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Role of barrier and buffer layer defect states in AlGaN/GaN HEMT structures

✍ Scribed by S. T. Bradley; A. P. Young; L. J. Brillson; M. J. Murphy; W. J. Schaff


Book ID
107452585
Publisher
Springer US
Year
2001
Tongue
English
Weight
193 KB
Volume
30
Category
Article
ISSN
0361-5235

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Assessment of layer composition and thic
✍ Baeumler, M. ;Müller, S. ;Köhler, K. ;Wagner, J. 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 158 KB

## Abstract AlGaN/GaN heterostructures for power applications, grown on sapphire substrates by metal organic vapor phase epitaxy (MOVPE) in a multiwafer reactor were analyzed by spectroscopic ellipsometry (SE). The thickness of the individual layers as well as the AlGaN bandgap energy were extracte

Structural properties of MBE AlInN and A
✍ Kirste, Lutz ;Lim, Taek ;Aidam, Rolf ;Müller, Stefan ;Waltereit, Patrick ;Ambach 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 421 KB

## Abstract A high‐resolution X‐ray diffraction and X‐ray reflectivity study of the structural properties of AlInN/GaN and AlGaInN/GaN high electron mobility transistor structures deposited by molecular beam epitaxy on metal organic chemical vapor deposition GaN/Al~2~O~3~ and GaN/SiC templates is p

Improvement of breakdown characteristics
✍ Yu, Hongbo ;Lisesivdin, Sefer B. ;Bolukbas, Basar ;Kelekci, Ozgur ;Ozturk, Musta 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 381 KB

## Abstract To improve the breakdown characteristics of an AlGaN/GaN based high electron mobility transistor (HEMT) for high voltage applications, AlGaN/GaN/Al~__x__~Ga~1−__x__~N double heterostructure (DH‐HEMTs) were designed and fabricated by replacing the semi‐insulating GaN buffer with content