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Passivation of Surface and Interface States in AlGaN/GaN HEMT Structures by Annealing

✍ Scribed by Hyeongnam Kim; Michael L. Schuette; Jaesun Lee; Wu Lu; James C. Mabon

Book ID
107454929
Publisher
Springer US
Year
2007
Tongue
English
Weight
400 KB
Volume
36
Category
Article
ISSN
0361-5235

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## Abstract AlGaN/GaN heterostructures for power applications, grown on sapphire substrates by metal organic vapor phase epitaxy (MOVPE) in a multiwafer reactor were analyzed by spectroscopic ellipsometry (SE). The thickness of the individual layers as well as the AlGaN bandgap energy were extracte