Defect depth profiling using photoluminescence and cathodoluminescence spectroscopy: the role of oxygen on reactive ion beam etching of GaN in O2/Ar plasmas

✍ Scribed by J.T Hsieh; J.M Hwang; H.L Hwang; O Breitschädel; H Schweizer

• Book ID: 108417408
• Publisher: Elsevier Science
• Year: 2001
• Tongue: English
• Weight: 148 KB
• Volume: 175-176
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/s0169-4332(01)00104-0