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A study of the role of HBr and oxygen on the etch selectivity and the post-etch profile in a polysilicon/oxide etch using HBr/O2 based high density plasma for advanced DRAMs

✍ Scribed by Deok-kee Kim; Young Keun Kim; Heon Lee


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
534 KB
Volume
10
Category
Article
ISSN
1369-8001

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