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Influence of an increase in the implantation dose of erbium ions and annealing temperature on photoluminescence in AlGaN/GaN superlattices and GaN epitaxial layers

✍ Scribed by A. M. Emel’yanov; N. A. Sobolev; E. I. Shek; V. V. Lundin; A. S. Usikov; E. O. Parshin


Book ID
110143949
Publisher
Springer
Year
2005
Tongue
English
Weight
48 KB
Volume
39
Category
Article
ISSN
1063-7826

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