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RF measurements and characterization of heterostructure field-effect transistors at low temperatures

โœ Scribed by Brockerhoff, W.; Meschede, H.; Prost, W.; Heime, K.; Weimann, G.; Schlapp, W.


Book ID
114551982
Publisher
IEEE
Year
1989
Tongue
English
Weight
812 KB
Volume
37
Category
Article
ISSN
0018-9480

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First small signal, large signal and rf power characteristics of experimental 3 mm gate length AlN/GaN devices are reported between RT and 200 C. A high drain breakdown of 42 V and the absence of dispersion effects indicate that this challenging heterostructure is indeed attractive for the developme