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Properties of p-type heterostructure field effect transistors at cryogenic temperatures

✍ Scribed by J.-H. Reemtsma; H. Meschede; W. Brockerhoff; K. Heime; W. Schlapp; G. Weimann

Book ID: 118363507
Publisher: Elsevier Science
Year: 1990
Tongue: English
Weight: 290 KB
Volume: 228
Category: Article
ISSN: 0039-6028
DOI: 10.1016/0039-6028(90)90355-c

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