Frequency response of AlInAs/GaInAs/InP modulation-doped field-effect transistors at cryogenic temperatures

✍ Scribed by Kolodzev, J.; Adesida, I.; Laskar, J.; Boor, S.; Reis, S.; Ketterson, A.; Cho, A.Y.; Fischer, R.; Sivco, D.

• Book ID: 114538448
• Publisher: IEEE
• Year: 1988
• Tongue: English
• Weight: 157 KB
• Volume: 35
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.8862