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Characteristics of 0.8- and 0.2-μm gate length InxGa 1-xAs/In0.52Al0.48As/InP (0.53⩽x⩽0.70) modulation-doped field-effect transistors at cryogenic temperatures
✍ Scribed by Lai, R.; Bhattacharya, P.K.; Yang, D.; Brock, T.L.; Alterovitz, S.A.; Downey, A.N.
- Book ID
- 114534820
- Publisher
- IEEE
- Year
- 1992
- Tongue
- English
- Weight
- 823 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0018-9383
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