Frequency limits of GaAs and InP field-effect transistors at 300 K and 77 K with typical active-layer doping

✍ Scribed by Maloney, T.J.; Frey, J.

• Book ID: 114592104
• Publisher: IEEE
• Year: 1976
• Tongue: English
• Weight: 95 KB
• Volume: 23
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/t-ed.1976.18440