Resonant electron tunneling in (111) GaAs/AlAs structures
β Scribed by G. F. Karavaev; S. N. Grinyaev
- Publisher
- Springer
- Year
- 1998
- Tongue
- English
- Weight
- 903 KB
- Volume
- 41
- Category
- Article
- ISSN
- 1573-9228
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
We have investigated the 2D 3 2D resonant tunneling in coupled X-band double quantum well structures, which can be achieved in GaAs/AlAs heterostructures by using high hydrostatic pressure. Until recently, there has been clear observation of 2D 3 2D resonant tunneling between confined transverse X X
Our paper is a ΓΏrst step towards tunnelling spectroscopy of individual X-minimum-related shallow donors. We investigated I -V characteristics of submicrometer mesa structures made on GaAs/AlAs/GaAs wafers -doped with silicon in the middle of AlAs layer. At 4:2 K and magnetic ΓΏeld up to 6 T we resolv