Electrical transport properties of AlAs/GaAs resonant tunneling diodes
β Scribed by Kim, S. K. ;Kang, T. W. ;Kim, T. W.
- Publisher
- John Wiley and Sons
- Year
- 1993
- Tongue
- English
- Weight
- 388 KB
- Volume
- 140
- Category
- Article
- ISSN
- 0031-8965
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π SIMILAR VOLUMES
We have investigated the peak and valley currents for a series of resonant tunneling diodes with AlAs barriers having widths in the range 1.9 5.9 nm and GaAs wells fabricated on GaAs substrates. Using a simple WKB expression that assumes resonant tunneling dominated by transfer through the 1-I condu
We present DC transport measurements of the valence to conduction band (Zener) tunneling current in a p-i-n diode with an ultrathin intrinsic layer containing a (GaAs) 5 /(AlAs) 2 multi-quantum well structure. According to recent theoretical predictions, the DC current should show maxima as a functi