Effective mass in the barriers of GaAs/AlAs resonant tunneling double barrier diodes

✍ Scribed by D. Landheer; G.C. Aers; Z.R. Wasilewski

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 496 KB
• Volume: 11
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1016/0749-6036(92)90361-8

✦ Synopsis

We have investigated the peak and valley currents for a series of resonant tunneling diodes with AlAs barriers having widths in the range 1.9 5.9 nm and GaAs wells fabricated on GaAs substrates. Using a simple WKB expression that assumes resonant tunneling dominated by transfer through the 1-I conduction band edge. a value for the strength, v(V), of our AlAs barriers is found to be 0.069 f 0.01 rV and the effective mass is found to be mb = (0.068 f 0.01)~~s. This agrees to within the measurement error with the result obtained for a series of diodes fabricated on InP by Broekaert et al.' with Ins,ssGas..r7As wells and pseudomorphic AlAs barriers. The measured peak currents are compared with the results of selfconsistent numerical solutions of Poisson's and Schroedinger's equations using the tlrduced effective mass.