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X-point tunneling in AlAs/GaAs double barrier heterostructures

✍ Scribed by D.Z.-Y. Ting; M.K. Jackson; D.H. Chow; J.R. Söderström; D.A. Collins; T.C. McGill

Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
402 KB
Volume
32
Category
Article
ISSN
0038-1101

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We have investigated the peak and valley currents for a series of resonant tunneling diodes with AlAs barriers having widths in the range 1.9 5.9 nm and GaAs wells fabricated on GaAs substrates. Using a simple WKB expression that assumes resonant tunneling dominated by transfer through the 1-I condu