Resonant Tunneling and Interface Band Mixing of X-Electrons in GaAs/AlAs Heterostructures
β Scribed by P.C. Klipstein
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 335 KB
- Volume
- 223
- Category
- Article
- ISSN
- 0370-1972
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π SIMILAR VOLUMES
We report the observation of resonant tunneling and magneto-tunneling between states of different effective mass derived from zone centre ( ) and zone edge (X ) points of the Brillouin zone in single AlAs barrier diodes. The nature of the X states involved (longitudinal X z or transverse X xy ) is d
We have investigated the 2D 3 2D resonant tunneling in coupled X-band double quantum well structures, which can be achieved in GaAs/AlAs heterostructures by using high hydrostatic pressure. Until recently, there has been clear observation of 2D 3 2D resonant tunneling between confined transverse X X