Enhancement of 2D → 2D Tunneling by Γ–XZ Mixing in GaAs/AlAs Resonant Tunneling Structures at High Pressure
✍ Scribed by Hyunsik Im; P. C. Klipstein; J. M. Smith; R. Grey; G. Hill
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 190 KB
- Volume
- 211
- Category
- Article
- ISSN
- 0370-1972
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✦ Synopsis
We have investigated the 2D 3 2D resonant tunneling in coupled X-band double quantum well structures, which can be achieved in GaAs/AlAs heterostructures by using high hydrostatic pressure. Until recently, there has been clear observation of 2D 3 2D resonant tunneling between confined transverse X X,Y states but not between longitudinal X Z states. In this paper, we demonstrate the existence of such resonant tunneling in samples with very thin well and barrier layers. The existence of detectable 2D 3 2D resonant tunneling between X Z states, even in a structure with a barrier thickness of 40 # e, is striking. However, by modelling the transport in terms of quantum beats between symmetric and anti-symmetric double well states, we show that G±X Z mixing can produce enhancements of up to %10 2 .