Valley mixing effects on electron tunneling transmission in GaAs/AlAs heterostructures
β Scribed by E.L. Ivchenko; A.A. Kiselev; Y. Fu; M. Willander
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 317 KB
- Volume
- 37
- Category
- Article
- ISSN
- 0038-1101
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π SIMILAR VOLUMES
The form factors of the electron-phonon interaction for GaAs/Ga \V Al V As single heterostructures have been evaluated using a finite height barrier. The calculations are performed within the extreme quantum limit approximation, assuming for the envelope electronic wavefunction a modified Fang-Howar
Photoluminescence and electroreflectance measurements in Si Ξ΄-doped GaAs/Al 0.35 Ga 0.65 -As triple quantum wells are performed in order to study the effect of ionized impurities on electron tunneling. It is theoretically shown that a thin quantum well with a Ξ΄-doping layer inserted between narrow a