✦ LIBER ✦

Effect of ionized impurities on electron tunneling in GaAs/AlGaAs triple quantum wells

✍ Scribed by J.H. Park; S. Ozaki; N. Mori; C. Hamaguchi

Publisher: Elsevier Science
Year: 1999
Tongue: English
Weight: 272 KB
Volume: 25
Category: Article
ISSN: 0749-6036
DOI: 10.1006/spmi.1998.0672

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✦ Synopsis

Photoluminescence and electroreflectance measurements in Si δ-doped GaAs/Al 0.35 Ga 0.65 -As triple quantum wells are performed in order to study the effect of ionized impurities on electron tunneling. It is theoretically shown that a thin quantum well with a δ-doping layer inserted between narrow and wide quantum wells of asymmetric double quantum wells enhances impurity scattering rate significantly. Photoluminescence decay time is found to decrease 30% at maximum compared with a sample without a δ-doping layer.

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