✦ LIBER ✦

Reduction in relaxation time due to ionized impurities in GaAs/AlGaAs quantum well structures

✍ Scribed by J.H. Park; S. Senzaki; N. Mori; C. Hamaguchi

Publisher: Elsevier Science
Year: 2000
Tongue: English
Weight: 117 KB
Volume: 27
Category: Article
ISSN: 0749-6036
DOI: 10.1006/spmi.2000.0869

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✦ Synopsis

Time-resolved photoluminescence measurements in δ-doped GaAs/AlGaAs on the quantum well structures are performed to study effects of ionized impurities relaxation process of photoexcited carriers. It is theoretically shown that a thin quantum well with a δ-doping layer inserted in the barrier layer of double quantum wells enhances the impurity scattering rate significantly. Photoluminescence decay time in the δ-doped samples is found to decrease compared with the undoped samples.

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