𝔖 Bobbio Scriptorium
✦   LIBER   ✦

The effects of photoexcited free carriers on exciton dynamics in GaAs/AlGaAs quantum wells

✍ Scribed by B.M. Ashkinadze; E. Cohen; Arza Ron; E. Linder


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
140 KB
Volume
15
Category
Article
ISSN
0749-6036

No coin nor oath required. For personal study only.

✦ Synopsis


We report on the effect of photogenerated free carriers on the spectral diffusion and on the LO-phonon Raman scattering of resonantly excited excitons. This is observed by an exciton population redistribution between localized states and by a decrease in the Raman scattering intensity under an extremely weak, additional, above bandgap excitation. We interpret these effects by a new channel for exciton transfer induced by free carrier -exciton scattering that adds up to the phonon assisted exciton tunneling between the states that arise from interface roughness.


πŸ“œ SIMILAR VOLUMES


Spin dynamics of exciton states in GaAS/
✍ B. Dareys; X. Marie; T. Amand; J. Barrau; Y. Shekun; I. Razdobreev; R. Planel πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 195 KB

We report an experimental study of the excitonic spin relaxation dynamics in GaAs/AlGaAs Multiple Quantum Wells (MQW) presenting interface roughness by time and polarization resolved luminescence spectroscopy. The relaxation is found to occur mainly when the excitons are in the free state, before th

Effect of ionized impurities on electron
✍ J.H. Park; S. Ozaki; N. Mori; C. Hamaguchi πŸ“‚ Article πŸ“… 1999 πŸ› Elsevier Science 🌐 English βš– 272 KB

Photoluminescence and electroreflectance measurements in Si Ξ΄-doped GaAs/Al 0.35 Ga 0.65 -As triple quantum wells are performed in order to study the effect of ionized impurities on electron tunneling. It is theoretically shown that a thin quantum well with a Ξ΄-doping layer inserted between narrow a

Photoluminescence spectroscopy on excito
✍ H.S. Ko; S.J. Rhee; Y.M. Kim; W.S. Kim; D.H. Kim; J.H. Bae; Y.S. Kim; J.C. Woo; πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 70 KB

Magneto-photoluminescence (PL) experiments of very thin GaAs/Al 0.3 Ga 0.7 As quantum wells were performed in a magnetic field (B) of up to 20 T. It has been observed that the diamagnetic shift changes abruptly from Ξ² B 2 to Ξ± B around 5 T as B increases, and both Ξ± and Ξ² become larger as the well-w

Ultrafast dynamics of intersubband relax
✍ D. Morris; D. Houde; B. Deveaud; A. Regreny πŸ“‚ Article πŸ“… 1994 πŸ› Elsevier Science 🌐 English βš– 144 KB

The dynamics of intersubband relaxation in GaAs quantum wells and the role of hot carriers and the phonon distributions have been investigated using two different optical techniques with femtosecond resolution: 1) time-resolved photoluminescence and 2) pump and probe experiments. The (2 \(\rightarro