The role of interface quality in resonant tunneling between transverse X-states in GaAs/AlAs double barrier structures pressurised beyond the type II transition

✍ Scribed by J.M. Smith; P.C. Klipstein; D.G. Austing; R. Grey; G. Hill

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 541 KB
• Volume: 56
• Category: Article
• ISSN: 0022-3697
• DOI: 10.1016/0022-3697(94)00224-x