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Improved triple resonant tunneling diodes using InxGa1−xAs/GaAs/AlAs strained layers

✍ Scribed by D. Lippens; J. Nagle; B. Grimbert; V. Sadaune; E. Lheurette; B. Vinter; P. Tilmant; M. François


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
275 KB
Volume
19
Category
Article
ISSN
0167-9317

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