Indirect gap resonant tunneling in GaAs/AlAs
β Scribed by N A Cade; S H Parmar; N R Couch; M J Kelly
- Publisher
- Elsevier Science
- Year
- 1987
- Tongue
- English
- Volume
- 64
- Category
- Article
- ISSN
- 0038-1098
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π SIMILAR VOLUMES
We present DC transport measurements of the valence to conduction band (Zener) tunneling current in a p-i-n diode with an ultrathin intrinsic layer containing a (GaAs) 5 /(AlAs) 2 multi-quantum well structure. According to recent theoretical predictions, the DC current should show maxima as a functi
We have investigated the 2D 3 2D resonant tunneling in coupled X-band double quantum well structures, which can be achieved in GaAs/AlAs heterostructures by using high hydrostatic pressure. Until recently, there has been clear observation of 2D 3 2D resonant tunneling between confined transverse X X
We report the observation of resonant tunneling and magneto-tunneling between states of different effective mass derived from zone centre ( ) and zone edge (X ) points of the Brillouin zone in single AlAs barrier diodes. The nature of the X states involved (longitudinal X z or transverse X xy ) is d