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Resonant tunnelling between X-levels in a GaAs/AlAs/GaAs/AlAs/GaAs device above 13 kbar

โœ Scribed by DG Austing; PC Klipstein; JS Roberts; G Hill

Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
433 KB
Volume
75
Category
Article
ISSN
0038-1098

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๐Ÿ“œ SIMILAR VOLUMES

Resonant ฮ“โ€“Xโ€“ฮ“ tunneling in GaAs/AlAs/Ga
Resonant ฮ“โ€“Xโ€“ฮ“ tunneling in GaAs/AlAs/GaAs single barrier heterostructures at zero and elevated magnetic field
โœ J.J. Finley; M.S. Skolnick; J.W. Cockburn; R. Teissier; R. Grey; G. Hill; M.A. P ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 139 KB

We report the observation of resonant tunneling and magneto-tunneling between states of different effective mass derived from zone centre ( ) and zone edge (X ) points of the Brillouin zone in single AlAs barrier diodes. The nature of the X states involved (longitudinal X z or transverse X xy ) is d