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Resonant tunnelling through single donor states in GaAs/AlAs/GaAs devices

✍ Scribed by Marta Gryglas; Michal Baj; Benoit Jouault; Giancarlo Faini; Antonella Cavanna

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
147 KB
Volume
17
Category
Article
ISSN
1386-9477

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✦ Synopsis

Our paper is a ΓΏrst step towards tunnelling spectroscopy of individual X-minimum-related shallow donors. We investigated I -V characteristics of submicrometer mesa structures made on GaAs/AlAs/GaAs wafers -doped with silicon in the middle of AlAs layer. At 4:2 K and magnetic ΓΏeld up to 6 T we resolved well-separated peaks attributed to resonant tunnelling via individual donors.

πŸ“œ SIMILAR VOLUMES

Zero dimensional resonant tunneling thro
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## Abstract We have fabricated magnetic III–V compound semiconductor resonant tunnelling diodes (RTD's) based on a (Ga, Mn)As material system. The RTD's contain a ferromagnetic Mn‐doped emitter, where the Mn‐concentration was chosen on both sides of the metal–insulator (M–I) transition. The measure