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Resistive switching effects of HfO2 high-k dielectric

โœ Scribed by M.Y. Chan; T. Zhang; V. Ho; P.S. Lee


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
537 KB
Volume
85
Category
Article
ISSN
0167-9317

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In this paper, the multiple regression model of electrical characteristics for HfO 2 thin films grown by metal organic molecular beam epitaxy (MOMBE) was investigated. The electrical properties, such as the accumulation capacitance and the hysteresis index, are the main factors to determine the char