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Intrinsic inhomogeneities and effects of resistive switching in doped manganites

✍ Scribed by N.A. Tulina; L.S. Uspenskaya; V.V. Sirotkin; Y.M. Mukovskii; D.A. Shulyatev


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
282 KB
Volume
444
Category
Article
ISSN
0921-4534

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In this paper, the effective densities of states for the conduction and valence bands, Nc and N,, the intrinsic carrier concentration ni and the ionized doping concentration in strained Si,\_,Ge, layers grown on (001) Si substrates are analytically calculated, and their temperature and Ge fraction d