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Analysis of high-k HfO2 and HfSiO4 dielectric films

โœ Scribed by W. Nieveen; B.W. Schueler; G. Goodman; P. Schnabel; J. Moskito; I. Mowat; G. Chao

Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
221 KB
Volume
231-232
Category
Article
ISSN
0169-4332

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โœ Jung Hwan Lee; Kyoung Eun Kweon; Young-Don Ko; Tae-Hyoung Moon; Jae-Min Myoung; ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 853 KB

In this paper, the multiple regression model of electrical characteristics for HfO 2 thin films grown by metal organic molecular beam epitaxy (MOMBE) was investigated. The electrical properties, such as the accumulation capacitance and the hysteresis index, are the main factors to determine the char