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Research on the molecular scale material removal mechanism in chemical mechanical polishing

✍ Scribed by Wang, YongGuang ;Zhao, YongWu


Book ID
107368453
Publisher
Elsevier
Year
2008
Tongue
English
Weight
669 KB
Volume
53
Category
Article
ISSN
2095-9273

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So far there is no consensus on the fundamental mechanism of material removal in chemical-mechanical polishing (CMP). Some researchers model the CMP process based on the mechanism proposed by Kaufman et al. [1], who attribute the material removal from the wafer surface to chemistry-aided mechanical