A mathematical model for material removal and chemical–mechanical synergy in chemical–mechanical polishing at molecular scale
✍ Scribed by J. Bai; Y.W. Zhao; Y.G. Wang
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 467 KB
- Volume
- 253
- Category
- Article
- ISSN
- 0169-4332
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
So far there is no consensus on the fundamental mechanism of material removal in chemical-mechanical polishing (CMP). Some researchers model the CMP process based on the mechanism proposed by Kaufman et al. [1], who attribute the material removal from the wafer surface to chemistry-aided mechanical
The ability to predict material removal rates in chemical mechanical planarization (CMP) is an essential ingredient for low cost, high quality IC chips. Recently, models that address the slurry particles have been proposed. We address three such models. The first two differ only in how the number of