𝔖 Bobbio Scriptorium
✦   LIBER   ✦

A mathematical model for material removal and chemical–mechanical synergy in chemical–mechanical polishing at molecular scale

✍ Scribed by J. Bai; Y.W. Zhao; Y.G. Wang


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
467 KB
Volume
253
Category
Article
ISSN
0169-4332

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


A fundamental model proposed for materia
✍ J. Xin; W. Cai; J.A. Tichy 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 431 KB

So far there is no consensus on the fundamental mechanism of material removal in chemical-mechanical polishing (CMP). Some researchers model the CMP process based on the mechanism proposed by Kaufman et al. [1], who attribute the material removal from the wafer surface to chemistry-aided mechanical

Pad Surface Roughness and Slurry Particl
✍ C. Wang; P. Sherman; A. Chandra; D. Dornfeld 📂 Article 📅 2005 🏛 International Academy for Production Engineering 🌐 English ⚖ 677 KB

The ability to predict material removal rates in chemical mechanical planarization (CMP) is an essential ingredient for low cost, high quality IC chips. Recently, models that address the slurry particles have been proposed. We address three such models. The first two differ only in how the number of