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Removal of Electrically Active Defects in Silicon by 340 MeV Xe ion Bombardment

✍ Scribed by Antonova, I. V. ;Dvurechenskii, A. V. ;Karanovich, A. A. ;Rybin, A. V. ;Shaimeev, S. S. ;Klose, H.

No coin nor oath required. For personal study only.

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