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Effect of Radiation Defects and Elastic Incompatibility Stresses on the Electrical Activation and Diffusion of Boron in Ion-Implanted Silicon

✍ Scribed by Stelmakh, V. F. ;Sutrtin-belevich, Yu. R. ;Chelyadinskii, A. R.

Publisher: John Wiley and Sons
Year: 1989
Tongue: English
Weight: 236 KB
Volume: 112
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.2211120150

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The influence of ion current density and

The influence of ion current density and target temperature on kinetics of accumulation of radiation defects at ion bombardment and on electrophysical properties of silicon doped by implantation of boron and phosphorus: V K Vasilev et al, Struct Defects in Semicon, Coll, Novosibirsk 1973, 247–250 (in Russian)

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