Defect production in silicon carbide irradiated with Ne and Xe ions with energy of 2.3 MeV/amu

✍ Scribed by C.H. Zhang; Y.M. Sun; Y. Song; T. Shibayama; Y.F. Jin; L.H. Zhou

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 712 KB
• Volume: 256
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2006.12.010