The results are presented from an investigation using the electron-beam-induced current (EBIC) and deep-level transient spectroscopy techniques which demonstrate that irradiation with a low energy electron beam produces increased electrical activity in p-type silicon specimens containing Fe or Cu. T
Mapping of electrically active defects in silicon by optical-beam-induced reflectance
β Scribed by Gary E. Carver; John D. Michalski; Bahiru Kassahun; Greg Astfalk
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 636 KB
- Volume
- 4
- Category
- Article
- ISSN
- 0921-5107
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