On the characterization of electrically active inhomogeneities in semiconductor silicon by charge collection at schottky barriers using the SEM-EBIC (II). Contrast due to defects

✍ Scribed by M. Kittler

• Publisher: John Wiley and Sons
• Year: 1980
• Tongue: English
• Weight: 696 KB
• Volume: 15
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.19800150515