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On the characterization of electrically active inhomogeneities in semiconductor silicon by charge collection at schottky barriers using the SEM-EBIC (I). Fundamentals and contrast due to macroscopical inhomogeneities

โœ Scribed by M. Kittler


Publisher
John Wiley and Sons
Year
1980
Tongue
English
Weight
605 KB
Volume
15
Category
Article
ISSN
0232-1300

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