✦ LIBER ✦

Electron-beam-induced activity of defects in silicon

✍ Scribed by P.R. Wilshaw; T.S. Fell; C.A. Amaku; M.D. de Coteau

Publisher: Elsevier Science
Year: 1994
Tongue: English
Weight: 691 KB
Volume: 24
Category: Article
ISSN: 0921-5107
DOI: 10.1016/0921-5107(94)90289-5

No coin nor oath required. For personal study only.

✦ Synopsis

The results are presented from an investigation using the electron-beam-induced current (EBIC) and deep-level transient spectroscopy techniques which demonstrate that irradiation with a low energy electron beam produces increased electrical activity in p-type silicon specimens containing Fe or Cu. This effect is termed electron-beam-induced activity (EBIA). An analysis of the EBIC technique for studying transition metal impurities is given and the EBIA of Fe-contaminated silicon is shown to be due to recombination-enhanced dissociation of FeB pairs. Substantial gettering of Fe to the specimen surface is found to occur, even at 300 K, when prolonged irradiation is used. EBIA in copper-contaminated material is found to be due to a state H(0.22) but the physical configuration of this species is not determined.

📜 SIMILAR VOLUMES

Mapping of electrically active defects i

Mapping of electrically active defects in silicon by optical-beam-induced reflectance

✍ Gary E. Carver; John D. Michalski; Bahiru Kassahun; Greg Astfalk 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 636 KB

Electron-beam-induced current microchara

Electron-beam-induced current microcharacterization of fabrication defects in hydrogenated amorphous silicon solar cells

✍ B.G. Yacobi; T.J. McMahon; A. Madan 📂 Article 📅 1984 🏛 Elsevier Science ⚖ 821 KB

Structure and defects induced by electro

Structure and defects induced by electron beam irradiation in silicon substrates and EPR ribbons

✍ R. M'Ghaieth; R. Gauthier; P. Pinard 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 339 KB

Electron beam induced damage of silicon

Electron beam induced damage of silicon germanium

✍ D.J. Paul; J.M. Ryan; M. Pepper; A.N. Broers; T.E. Whall; J.M. Fernández; B.A. J 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 304 KB

The damage to modulation-doped pseudomorphic SiGe channels was investigated for a typical 40 keV electron beam lithography resist technique and also a high resolution 300 keV direct write SiO2 patterning technique. Annealing studies on the irradiated samples were also performed. Results show that th

Electronic defects in silicon induced by

Electronic defects in silicon induced by deuterium plasma treatment

✍ D. Dimova-Malinovska; M. Stutzmann 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 304 KB

Electronic defects induced in silicon by

Electronic defects induced in silicon by SF6 plasma etching

✍ A. Belkacem; E. André; J.C. Oberlin; C. Pomot; B. Pajot; A. Chantre 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 345 KB

Electronic defects induced in p-type silicon by SF~ plasma etching in microwave multipolar plasma reactors have been studied by capacitance ,spectroscopy, spreading resistance and infrared absorption measurements. A passivation of the boron electrical activity observed near 'the etched surface is as