Electronic defects induced in p-type silicon by SF~ plasma etching in microwave multipolar plasma reactors have been studied by capacitance ,spectroscopy, spreading resistance and infrared absorption measurements. A passivation of the boron electrical activity observed near 'the etched surface is as
β¦ LIBER β¦
Electronic defects in silicon induced by deuterium plasma treatment
β Scribed by D. Dimova-Malinovska; M. Stutzmann
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 304 KB
- Volume
- 86
- Category
- Article
- ISSN
- 0038-1098
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